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Physikalisches Kolloquium: Prof. Dr. Torsten Meier (Universität Paderborn)

Kolloquien/Gastvorträge

Prof. Dr. Torsten Meier (Universität Paderborn)
Department of Physics
Universität Paderborn

spricht zum Thema:

Ultrafast optoelectronics and strong field effects in semiconductors

The first experimental verification of Bloch oscillations, i.e., the oscillatory spatial motion of electrons in periodic potentials in the presence of static electric fields, in the early 1990s has settled a long-lasting debate and motivated a huge number of further studies in semiconductors and other, e.g., atomic and photonic, systems. Besides static fields (or forces or bias in other systems) also effects like dynamical localization that may arise in the presence of oscillating fields and various combinations of static and time-dependent fields were explored.
More recently, the availability of extremely intense optical and Terahertz fields of strengths which are comparable to intraatomic fields made it possible to study matter under very extreme conditions. In particular, high harmonic generation and related phenomena have received tremendous attention as they can provide detailed information about the underlying ultrafast dynamics on the microscopic scale. I will introduce a theoretical approach which provides a unified framework to describe the abovementioned effects by including both field-induced inter- and intraband excitations in the semiconductor Bloch equations and discuss a few selected examples.

Interessenten sind herzlich eingeladen.

Prof. Dr. Kühn

Zur Terminübersicht des physikalischen Kolloquiums


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Physikalisches Kolloquium: Prof. Dr. Torsten Meier (Universität Paderborn)

Kolloquien/Gastvorträge

Prof. Dr. Torsten Meier (Universität Paderborn)
Department of Physics
Universität Paderborn

spricht zum Thema:

Ultrafast optoelectronics and strong field effects in semiconductors

The first experimental verification of Bloch oscillations, i.e., the oscillatory spatial motion of electrons in periodic potentials in the presence of static electric fields, in the early 1990s has settled a long-lasting debate and motivated a huge number of further studies in semiconductors and other, e.g., atomic and photonic, systems. Besides static fields (or forces or bias in other systems) also effects like dynamical localization that may arise in the presence of oscillating fields and various combinations of static and time-dependent fields were explored.
More recently, the availability of extremely intense optical and Terahertz fields of strengths which are comparable to intraatomic fields made it possible to study matter under very extreme conditions. In particular, high harmonic generation and related phenomena have received tremendous attention as they can provide detailed information about the underlying ultrafast dynamics on the microscopic scale. I will introduce a theoretical approach which provides a unified framework to describe the abovementioned effects by including both field-induced inter- and intraband excitations in the semiconductor Bloch equations and discuss a few selected examples.

Interessenten sind herzlich eingeladen.

Prof. Dr. Kühn

Zur Terminübersicht des physikalischen Kolloquiums


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